 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE BCR08AM-14 OUTLINE DRAWING 5.0 MAX. Dimensions in mm 4.4 VOLTAGE CLASS TYPE NAME T1 TERMINAL T2 TERMINAL GATE TERMINAL CIRCUMSCRIBE CIRCLE 0.7 1.25 1.25 1.3 12.5 MIN. 5.0 MAX. 3.9 MAX. ............................................................... 0.8A ................................................................. 700V q IFGT !, IRGT ! , IRGT # ....................................... 5mA q IT (RMS) q VDRM JEDEC : TO-92 APPLICATION Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines, trigger circuit for low and medium triac, solid state relay, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state Non-repetitive peak off-state voltageV1 voltageV1 Voltage class 14 700 840 Unit V V Symbol IT (RMS) ITSM I 2t PGM PG (AV) VGM IGM Tj Tstg -- Parameter RMS on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360 conduction, Tc=67C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 0.8 8 0.26 1 0.1 6 1 -40 ~ +125 -40 ~ +125 0.23 Unit A A A2s W W V A C C g Feb.1999 V1. Gate open. MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=125C, VDRM applied Tc=25C, ITM=1.2A, Instantaneous measurement @ # ! Limits Min. -- -- -- -- -- -- -- -- 0.1 -- V2 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 2.0 2.0 2.0 2.0 5 5 5 -- 50 -- Unit mA V V V V mA mA mA V C/ W V/s Gate trigger voltage Tj=25C, VD=6V, RL=6, RG=330 Gate trigger current Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage @ # Tj=25C, VD=6V, RL=6, RG=330 Tj=125C, VD=1/2VDRM Junction to case V3 V2. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. Voltage class VDRM (V) (dv/dt)c Min. Unit Test conditions 1. Junction temperature Tj=125C Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE (di/dt)c TIME TIME VD TIME 14 700 0.5 V/s 2. Rate of decay of on-state commutating current (di/dt)c=-0.4A/ms 3. Peak off-state voltage VD=400V MAIN CURRENT MAIN VOLTAGE (dv/dt)c PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 10 101 7 5 ON-STATE CURRENT (A) 3 2 100 7 5 3 2 10-1 7 5 3 1.5 2.0 2.5 3.0 Tj = 25C 8 6 4 2 0 100 3.5 4.0 5.0 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 |
Price & Availability of BCR08AM-14
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |